Current Transport Modeling of Carbon Nanotube Field Effect Transistors for Analysis and Design of Integrated Circuits

and To my sisters Lyna Maria and Ana Maritza Without their patience, understanding support and most of all love, the completion of this dissertation would not have been possible. iii ACKOWLEDGMENTS My thanks and special appreciation to my advisor and mentor Dr. Ashok Srivastava. I am very thankful for his guidance, patience and understanding throughout my dissertation research. I would have not completed this research without his suggestions, discussions and constant encouragement. Geber Urbina for their friendship and support. Table 4.1. Calculated threshold voltage (V th) and saturation voltage (V ds,sat) of CNT-FETs from the model equations for different carbon nanotubes.. Figure 1.1: (a) Single-walled carbon nanotube and (b) bundle of single-walled carbon Figure 1.2: Schematic representation of a chiral vector in the crystal lattice of a carbon nanotube (figure reprinted from [25] with the respective copyright Figure 1.10: (a) Energy levels of the materials involved in manufacturing a CNT-FET and (b) energy band diagram at thermal equilibrium of a two terminal CNT-FET. Figure 3.1: (a) Plot of the charges from gate to substrate and (b) plot of the potential distribution from gate to substrate in a CNT-FET. ix Figure 3.2: Energy band diagram of a two terminal CNT-FET for (a) V gb = V fb and (b) V gb > 0. Figure 3.3: Carbon nanotube surface potential, ψ cnt,s versus gate substrate voltage for V fb = 0 and ф 0 = 0 for a CNT-FET (5,3) using a numerical approach. The device dimensions are: T ox1 = 40 nm, T ox2 = 400 nm and L = 50 nm. Figure 3.4: Carbon nanotube surface potential, ψ cnt,s versus gate substrate voltage for V fb = 0 and ф 0 = for (a) CNT-FET (11,3) and (b) CNT-FET (7,2). The device dimensions are: T ox1 = 40 nm, T ox2 = 400 nm and L = 50 nm. Figure 3.5: I-V characteristics of CNT-FETs with Q 01 = Q 02 = 0 for (a) CNT-FET (3,1) and (b) CNT-FET (7,2). The device dimensions are: T ox1 = 15 nm, T ox2 = 120 nm and L = 260 nm. Figure 3.6: I-V characteristics of CNT-FETs in subthreshold region of operation for Q 01 = Q 02 = 0 for (a) CNT-FET (10,3) and (b) CNT-FET (11,3). The device dimensions are: T ox1 = 40 nm, T ox2 = 400 nm and L = 50 nm. Figure 4.1: (a) Plot …